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(R)
ESM765PI-800
RECOVERY RECTIFIER DIODES
MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND IRM AT 100C UNDER USERS CONDITIONS MOTOR CONTROLS AND CONVERTERS SWITCH MODE POWER SUPPLIES INSULATED PACKAGE: TO-220AC Insulating voltage = 2500 VRMS
K
10 A 800 V 150C 1.35 V 300 ns
A
Insulated TO-220AC
DESCRIPTION Fast recovery rectifiers suited for applications in combination with superswitch transistors.
Symbol VRRM IF(RMS) IF(AV) IFSM Ptot Tstg Tj
Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Power dissipation Storage temperature range Maximum operating junction temperature Tc = 100C = 0.5 Tp = 10 ms Sinusoidal Tc = 100C tp 20s
Value 800 16 10 120 20 - 40 to + 150 + 150
Unit V A A A W C
August 1999 - Ed: 2B
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ESM765PI-800
THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 3.5 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25C Tj = 100C Tj = 25C Tj = 100C
Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2 %
Min.
Typ.
Max. 20 1 1.4 1.35
Unit mA mA V
VR = VRRM IF = 10 A
To evaluate the conduction losses use the following equation : P = 1.2 x IF(AV) + 0.015 x IF2(RMS) VF = 1.2 + 0.015 IF RECOVERY CHARACTERISTICS Symbol trr Qrr Tj = 25C Tj = 25C Test conditions IF = 1A dIF/dt = - 15A/s VR = 30V VR = 200V 2.3 Min. Typ. Max. 300 Unit ns C
IF = 10A dIF/dt = - 50A/s
Fig. 1: Low frequency power losses versus average current.
Fig. 2: Peak current versus form factor.
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ESM765PI-800
Fig. 3: Non repetitive peak surge current versus overload duration. Fig. 4: Thermal impedance versus pulse width.
Fig. 5: Voltage drop versus forward current.
Fig. 6: Capacitance versus applied reverse voltage
Fig. 7: Recovery charge versus dIF/dt.
Fig. 8: Recovery time versus dIF/dt.
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ESM765PI-800
Fig. 9: Peak reverse current versus dIF/dt.
PACKAGE MECHANICAL DATA Insulated TO-220AC
B I L b2 C
DIMENSIONS REF. A Millimeters Min. 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Inches Min. 0.560 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069
F
a1 a2 B b1
A
a1
b2 C c1
l2 a2 b1
c2 e F I
c1
L l2
e
c2
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4

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